Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

Qingrong Huang, Dayane Reis, Chao Li, Di Gao, Michael T. Niemier, Xiaobo Sharon Hu, Mohsen Imani, Xunzhao Yin, Cheng Zhuo

Abstract: The article presents computing-in-memory designs using ferroelectric field-effect transistors. Thanks to good support for various key logic operations, these designs can be used for multiple learning tasks/paradigms, from classical machine learning to hyperdimensional computing, and achieve both compactness and efficiency.