A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput

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Wanik Cho, Chanhui Jeong, Jongwoo Kim, Jongseok Jung, Keunseon Ahn, Jayoon Goo, Sangkyu Lee, Kayoung Cho, Tei Cho, Dauni Kim, Gwan Park, Yushin Ahn, Sooyeol Chai, Gwihan Ko, Sunyoung Jung, Eunwoo Jo, Taehun Park, Jinhyun Ban, Cheoljoong Park, Jae Hyun Park et al. (29 additional authors not shown)

Published: 2025, Last Modified: 07 Jan 2026ISSCC 2025EveryoneRevisionsBibTeXCC BY-SA 4.0
Abstract: The rising demand for high-density and high-performance NAND Flash is unprecedented, due to the expansion of data within enterprise SSDs, which fueled by the growth of the artificial intelligence industry. Both sequential- and random-access performance must improve to accommodate high-speed and large data transfers between a NAND Flash and its controller. Furthermore, improved reliability, and effective read and write performance continue to be crucial factors for QLC NAND Flash.