Emerging Memory Technologies

Jörg Henkel

Abstract: fig orientation="portrait" position="float" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <graphic orientation="portrait" position="float" xlink:href="henke-2695879.tif"/> </fig> <bold xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">The focus of this issue</b> of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">IEEE Design&amp;Test (D&amp;T)</i> is on merging memories and is brought to us by Yiran Chen, Tei-Wei Kuo, and Barbara de Salvo. Emerging memory technologies have significant advantages in some of the typical memory characteristics but fall short in others such that their broad adoption continues to be a challenge. This special issue highlights the most prominent problems and their current solutions. The special issue is accompanied by a comprehensive survey “Recent Technology Advances of Emerging Memories” focusing primarily on phase change memory, spin-transfer torque random access memory, and resistive random access memory, which serves as an introduction to the topic.