Detection of dislocation-free state in Dash-necking process of Si crystal growth furnace using the Czochralski Method

Shiori Ueta, Toru Kurihara, Yuta Saibara, Hideyuki Sato, Pao-Hua Chu

Abstract: Silicon single crystal is the most commonly used material in the semiconductor industry. The dislocation-free silicon is important for semiconductor industry, and it is confirmed by habit lines observed on its exterior. In this study, we investigated an automated method to detect habit lines using DoG images with anisotropic standard deviation, and to determine the pull-up timing during necking process. As a result, habit line detection and pulling instructions were successful three out of three times.