Template-based MOSFET device model

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Mark G. Graham, John J. Paulos, Douglas W. Nychka

Published: 1995, Last Modified: 13 May 2025IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1995EveryoneRevisionsBibTeXCC BY-SA 4.0
Abstract: This paper describes a novel method of representing the three-dimensional MOSFET current table. The method utilizes a template constructed from a drain sweep curve. This template is compressed/expanded and scaled to match all other possible drain sweep curves. This modeling technique provides more than a 10x reduction in storage space requirements, relative to a true three-dimensional table, with little loss in accuracy. It will also be shown that the method can be extended to model the intrinsic charge surfaces.<>