Broad-band transimpedance amplifier for multigigabit-per-second (40 Gbps) optical communication systems in 0.135µm PHEMT technology

Miguel Ângelo M. Madureira, Paulo M. P. Monteiro, Rui L. Aguiar, Manuel Violas, M. Gloanec, E. Leclerc, Bernard Lefebvre

Abstract: This paper presents the design and characterization of a high-bandwidth transimpedance GaAs MMIC suitable for the 40 Gbps data transmission rate. The circuit was implemented on a well established MMIC PH15 process from United Monolithic Semiconductors (UMS) offering good yield, high performance and low cost per chip. The circuit presents a 49dB/spl Omega/ gain, a low noise figure and wide bandwidth for input capacities in excess of 100 fF. An analysis considering noise, stability and the influence of bondwire inductance on the overall circuit behaviour was performed. Input capacitance tolerance and output impedance matching conditions were also evaluated. On-wafer characterisation results are also presented and confronted with simulation data showing good agreement with simulated results.