In-Memory Computing with Spintronic Devices

Deliang Fan, Shaahin Angizi, Zhezhi He

Abstract: In-Memory computing has drawn many attentions as a promising solution to reduce massive power hungry data traffic between computing and memory units, leading to significant improvement of entire system performance and energy efficiency. Emerging spintronic device based non-volatile memory is becoming a next-generation universal memory candidate due to its non-volatility, zero leakage power in un-accessed bit-cell, high integration density, excellent endurance and compatibility with CMOS fabrication technology. In this paper, we present that different spintronic devices based memory, including spin-orbit torque magnetic random access memory (SOT-MRAM), domain wall motion memory, magnetic racetrack memory, could be leveraged to implement logic functions within memory without add-on logic circuits. As a case study, we employ Advanced Encryption Standard (AES) algorithm to elucidate the efficiency of such in-memory computing based on spintronic memory.