Robustness of 1.2 kV SiC MOSFET devices

D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, A. Bouzourene

Abstract: Highlights•This comparative study deals with robustness performances of two types of 1.2 kV SiC MOSFETs.•Short-circuit tests have been performed in order to evaluate the critical energy and to analyse failure mechanisms.•Repetitive short-circuit operations have been performed to evaluate the number of short circuit operations SiC and to point out failure mechanisms by monitoring ageing indicators.