Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs)

Nhu Q. Tran, Phuc Truong Loc Nguyen, Tri M. Do

Abstract: Non-linear methods are necessary in order to reliably determine the optimal performance of power devices. This paper presents an attempt to utilize the load-pull technique, one of the most well-known non-linear methods, by using CCMT 1808 source and MPT 1808 load tuners from Focus Microwave to characterize a gallium nitride (GaN) high-electron-mobility transistor (HEMT) CGH40010F with bias point VDS = 28 V, IGS = 130 mA at 2 GHz. From the experimental results, various optimum parameters will be obtained and the conditions for optimal performance of the device under test, particularly maximum power gain, will be determined. Finally, the experimental data will then be compared to its official counterpart found in the datasheet of the transistor. This will enable some insightful conclusions on the load-pull technique to be drawn.