The study of TSV-induced and strained silicon-enhanced stress in 3D-ICs

Jindong Zhou, Yuyang Chen, Youliang Jing, Pingqiang Zhou

Abstract: Highlights•An accurate stress distribution of a complete TSV structure through FEA simulation.•The combined stress distribution of strained-Si transistor and TSV structure.•The strained-Si transistor mobility variations around a TSV in a 3D-IC.•An exploration on the structural effects on 3D stress issues.