A Compact 2.45-/5.8-GHz Dual-Band RF Energy Harvesting Front-End With On-Chip IMN

Zushuai Xie, Ying Zhou, Guoqing Li, Tinghuan Chen, Zhikuang Cai, Zixuan Wang

Abstract: This letter proposes a fully integrated on-chip dual-band RF energy harvesting (RFEH) front-end based on 0.15- $\mu $ m pHEMT GaAs technology. To realize a flexible design of dual-band RFEH front-end, a T-shape-like impedance matching network (IMN) with two symmetric series–parallel $LC$ networks is proposed. An odd–even-mode analysis theory for symmetrical T-type IMN is introduced, enabling rapid construction of dual-band IMN. Since the frequency bands in both modes remain mutually unaffected, this approach significantly reduces dual-band iteration time. A highly efficient dual-band GaAs on-chip RFEH front-end operating at 2.4 and 5.8 GHz was fabricated with a chip area of only $700\times 700~\mu \text {m}^{2}$ . Measurements validate the RFEH front-end achieves a peak power conversion efficiency (PCE) of 64.3% and 40.8% at 2.4 and 5.8 GHz, respectively, with 19 dBm of input power level (Pin) and 2.2-k $\Omega $ load resistive (RL).

External IDs:doi:10.1109/lmwt.2025.3627675