Sensitivity Analysis Based on Neural Network for Optimizing Device Characteristics

Min-Hye Oh, Min-Woo Kwon, Kyungchul Park, Byung-Gook Park

Abstract: This letter presents a novel method for the sensitivity analysis between a process parameter and an electrical characteristic using the gradient of a neural network (NN). As devices become scaled and new emerging devices appear, it becomes more complex and the development of a SPICE model takes considerable time. Sensitivity analysis based on NN can accurately obtain the sensitivity even if the data are correlated with each other and have a non-linear relationship. The proposed method can be used to model the device characteristics and optimize process control through component analysis. It is verified using a feedback field-effect transistor (FBFET), one of the emerging neuromorphic devices. We execute experiments with 1055 TCAD simulations calibrated based on 33 measurement data for various process parameters and bias combinations and compare the results with a general linear model (GLM). In this work, we select 7 input parameters and extract voltage threshold (Vth) and on-current (ION), which are key characteristics of FBFET, as output parameters, and analyze the sensitivity with our method and provide a process control solution. This letter shows an important role in filling the gap between the emerging device proposal and the development of the SPICE model.