A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications

Win-San Khwa, Meng-Fan Chang, Jau-Yi Wu, Ming-Hsiu Lee, Tzu-Hsiang Su, Keng-Hao Yang, Tien-Fu Chen, Tien-Yen Wang, Hsiang-Pang Li, Matthew J. BrightSky, SangBum Kim, Hsiang-Lam Lung, Chung Lam

Abstract: For multilevel cell (MLC) phase change memory (PCM), resistance drift (R-drift) phenomenon causes cell resistance to increase with time, even at room temperature. As a result, the fixed-threshold-retention (FTR) raw-bit-error-rate (RBER) surpasses practical ECC correction ability within hours after being programmed. This study proposes a resistance drift compensation (RDC) scheme to mitigate R-drift issue. The proposed RDC scheme realizes PCM drift compensation and features RDC pulse to suppress ECC decoding failure. The proposed approach was validated using a 90-nm 128M cells PCM chip and an FPGA-based memory controller verification system. The MLC PCM FTR RBER has been suppressed by over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$100\times $ </tex-math></inline-formula> , thereby bringing it within ECC capability. The effectiveness of the RDC scheme was verified up to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{6}$ </tex-math></inline-formula> cycles.