Heterogeneous Photodiodes on Silicon Nitride Waveguides with 20 GHz Bandwidth

Qianhuan Yu, Junyi Gao, Nan Ye, Boheng Chen, Keye Sun, Linli Xie, Kartik Srinivasan, Michael Zervas, Gabriele Navickaite, Michael Geiselmann, Andreas Beling

Abstract: We demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si 3 N 4 waveguides with 20 GHz bandwidth and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Balanced photodiodes have 10 GHz bandwidth.