Optimization of In0.20Ga0.80N/GaN-Based TCAD Design for Intermediate band Solar cell: Temperature impact

AMEZZOUG SALAHEDDINE, Haddou El Ghazi, Abderrazzak BOUZIANE, Walid Belaid, Ahmed Sali

Keywords: intermediate-band Solar cells IBSC; InGaN quantum dots; III-N wide-bandgap semiconduc-tors; p-i-n junction; TCAD device simulation; photovoltaic device modelling.

Abstract: Intermediate-band solar cells offer the potential to surpass the Shockley-Queisser efficiency limit in single-junction architectures, though optimal material systems and device configurations remain subjects of active investigation. This study presents comprehensive two-dimensional device-level simulations utilizing Silvaco Atlas TCAD software to analyze p-i-n In₀.₂₀Ga₀.₈₀N/Gan solar cell performance with an intermediate band generated by In₀.₂₀Ga₀.₈₀N quantum dot arrays embedded within the intrinsic region. This study presents the modeling and simulation of a quantum dot solar cell based on the In0,20Ga0,80N/GaN material system. The investigation encompasses comprehensive analysis of key photovoltaic parameters including short-circuit current density Jsc, open-circuit voltage Voc, fill factor FF and power conversion efficiency of the In0,20Ga0,80N/GaN quantum dot solar cell QDSC under different temperatures employing AM1.5 solar spectrum illumination at one-sun intensity. Temperature-dependent characterization reveals systematic performance degradation with increasing operating temperature, with conversion efficiency decreasing from 47,38% at 295 K to 45,85% at 335 K, representing a relative reduction of 3.23% over this temperature range.

Submission Number: 51