Design of a high-performance Millimeter-wave amplifier using specific modeling

Published: 01 Jan 2014, Last Modified: 13 Nov 2024ASP-DAC 2014EveryoneRevisionsBibTeXCC BY-SA 4.0
Abstract: In this design contest, the design methodology leading to a high performance Millimeter-wave amplifier in 0.13 μm SiGe BiCMOS is elaborated. Equivalent circuit models of the utilized cascode shielding structure are developed to assist the amplifier design. Meanwhile, final layouts of the passive connections are verified by 3D electromagnetic simulation in ANSYS HFSS. The implemented amplifier obtained a gain more than 45 dB in band, which is the gain record of silicon-based amplifiers in W-band.
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