A Simplified Model for a NbO2 Mott Memristor Physical Realization

Ioannis Messaris, Ronald Tetzlaff, Alon Ascoli, R. Stanley Williams, Suhas Kumar, Leon O. Chua

Abstract: In this paper, we propose a new model for practical, nano-scale, NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based Mott memristors, which is based on a thorough analysis performed on a recently presented physics-based model for these devices. Our investigations revealed that the 3D Poole-Frenkel conduction mechanism adopted in the aforementioned model, can be well-approximated by a transport equation in which: a) memristor current is expressed as a linear function of memristor voltage and b) the device memductance is solely dependent on the device temperature which represents the memristor state. The resulting simplified mathematical form of the original differential algebraic equation set is not only more suitable for simulating large-scale, nano-scale NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based memristor circuits, but is also ideal for circuit-theoretic investigations which may allow an in depth understanding of the peculiar nonlinear behaviors of these devices.